Crystallographic evolution of microstructure in thin film processing: Part I. grain size distribution
- J. Trogolo
- R.A. Roy
- et al.
- 1994
- Journal of Electronic Materials
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Crystallographic evolution of microstructure in thin film processing: Part II. Grain boundary structure
- Ronald R. Petkie
- K.N. Tu
- et al.
- 1994
- Journal of Electronic Materials
Lead (Pb)-free solders for electronic packaging
- Sung K. Kang
- Amit K. Sarkhel
- 1994
- Journal of Electronic Materials
Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1-xAs growth
- J.W. Huang
- D.F. Gaines
- et al.
- 1994
- Journal of Electronic Materials
Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors
- P. Agnello
- V.P. Kesan
- et al.
- 1994
- Journal of Electronic Materials
Solid- and gas-source "hybrid" Si molecular beam epitaxy for a Si1-xGex/Si single quantum well electroluminescent device
- Y. Kato
- S. Fukatsu
- et al.
- 1994
- Journal of Electronic Materials
Precipitation of arsenic in doped GaAs
- C.L. Chang
- K. Mahalingam
- et al.
- 1993
- Journal of Electronic Materials
Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures
- Ulf Gennser
- V.P. Kesan
- et al.
- 1993
- Journal of Electronic Materials
Out-of-plane thermal expansion coefficient of biphenyldianhydride-phenylenediamine polyimide film
- S.T. Chen
- H.H. Wagner
- 1993
- Journal of Electronic Materials
Improved control of momentary rapid thermal annnealing for silicidation
- P. Agnello
- A. Fink
- 1993
- Journal of Electronic Materials