The DX centre
T.N. Morgan
Semiconductor Science and Technology
A p-i-n diode for a Si1-xGex/Si single quantum well (SQW) electroluminescent (EL) device was successfully fabricated by solid-source (SS) and gas-source (GS) "hybrid" Si molecular beam epitaxy (MBE). First, the undoped SQW layer was grown on a p-type Si(100) substrate by GSMBE using disilane (Si2H6) and germane (GeH4). Then the n-type Si contact layer was regrown by SSMBE after transferring the sample through the air. A (2 × 1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. The excellent quality of the EL p-i-n device was shown by the sharpest emission lines, ≈5.5 meV, ever reported in the EL spectra of an SiGe system. Linear polarization along the SQW plane was also observed for no-phonon replica of EL. © 1994 The Mineral, Metal & Materials Society, Inc.
T.N. Morgan
Semiconductor Science and Technology
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
J. Tersoff
Applied Surface Science