Parasitic Bipolar Effects in Submicrometer GaAs MESFET's
- Bart J. van Zeghbroeck
- W. Patrick
- et al.
- 1987
- IEEE Electron Device Letters
Publications
307 results at IEEE Electron Device Letters
Effect of Off-Axis Implant on the Characteristics of Advanced Self-Aligned Bipolar Transistors
- Ching-Te Chuang
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
Bipolar Transistor with Self-Aligned Lateral Profile
- G.P. Li
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Depletion-Mode GaAs SISFET's By Selective Ion Implantation
- H. Baratte
- Paul M. Solomon
- et al.
- 1987
- IEEE Electron Device Letters
Design and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
Lateral Encroachment of Extrinsic-Base Dopant in Submicrometer Bipolar Transistors
- Pong-Fei Lu
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
MONOLITHIC INTEGRATION OF A 3-GHZ DETECTOR/PREAMPLIFIER USING A REFRACTORY-GATE, ION-IMPLANTED MESFET PROCESS.
- D.L. Rogers
- 1986
- IEEE Electron Device Letters
Scaled GaAs MESFET's with gate length down to 100 nm
- Heinz Jaeckel
- Volker Graf
- et al.
- 1986
- IEEE Electron Device Letters
Semi-Classical Calculation of Charge Distributions in Ultra-Narrow Inversion Lines
- Alan C. Warren
- Dimitri A. Antoniadis
- et al.
- 1986
- IEEE Electron Device Letters
Sub-400-ps ISL circuits
- Ching-Te Chuang
- G.P. Li
- et al.
- 1986
- IEEE Electron Device Letters