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IEEE Electron Device Letters
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Device-grade ultra-shallow junctions fabricated with antimony

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Abstract

Extremely shallow, below ~80 nm, n- junctions fabricated with antimony have been analytically and electrically investigated. It is shown that by the use of antimony one can reach sheet resistivity/ shallowness combinations that are superior to those achievable with arsenic. The leakage of these junctions was found to be sufficiently low to allow VLSI applications. These investigations indicate that below a certain junction depth antimony should be the dopant of preference. © 1986 IEEE

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IEEE Electron Device Letters

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