IEEE Electron Device Letters

Bipolar Transistor with Self-Aligned Lateral Profile

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This paper presents a new self-alignment concept for scaled-down bipolar transistors: the self-aligned lateral profile. Using this concept to form the impurity profile and combining it with a wraparound base contact to reduce the emitter-base contact spacing and an n<sup>+</sup>-polyrefractory metal emitter stack to reduce the emitter resistance, a highperformance and potentially high-yield device structure can be obtained. The device structure can be adapted to a CMOS or merged bipolar-CMOS process and can also be easily optimized for analog applications. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.