Publication
IEEE Electron Device Letters
Paper

Transient Switching of the Parasitic Bipolar Device of an Epitaxial CMOS Transistor

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Abstract

The turn-on delay time of the vertical parasitic bipolar device of a CMOS transistor after the application of a latch-up triggering signal to forward bias the n<sup>+</sup> source junction was studied. We found that the delay time for the device on an epitaxial CMOS transistor is in the order of a few nanoseconds, which is much shorter than that on a nonepitaxial CMOS transistor. Copyright © 1987 by The Institute of Electrical and Electronics, Inc.

Date

01 Jan 1987

Publication

IEEE Electron Device Letters

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