Hot-electron-induced defects at the Si-SiO2 interface at high fields at 295 and 77 K
- M.V. Fischetti
- B. Riccó
- 1985
- Journal of Applied Physics
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2357 results at Journal of Applied Physics
Diode current detection of extended x-ray absorption fine structure in gallium arsenide
- R.F. Boehme
- G.S. Cargill III
- et al.
- 1985
- Journal of Applied Physics
Synthesis of compound thin films by dual ion beam deposition. II. Properties of aluminum-nitrogen films
- H.T.G. Hentzell
- J.M.E. Harper
- et al.
- 1985
- Journal of Applied Physics
Correlation between chemistry and the amount of mixing in bilayers submitted to ion bombardment
- F.M. D'Heurle
- J.E.E. Baglin
- et al.
- 1985
- Journal of Applied Physics
Low-field susceptibility of GdAl spin glass: Cooling-rate dependence and field dependence of peak temperature
- M. Matsui
- A.P. Malozemoff
- et al.
- 1985
- Journal of Applied Physics
Physical model for static and dynamic scaling in spin glasses
- A.P. Malozemoff
- B. Barbara
- 1985
- Journal of Applied Physics
Thermal stability of the Al/PdxW100-x/Si contact systems
- M. Eizenberg
- R.D. Thompson
- et al.
- 1985
- Journal of Applied Physics
Model for a Josephson sampling gate
- B.J. Van Zeghbroeck
- 1985
- Journal of Applied Physics
Electronic and magnetic structure of ultrathin cobalt-chromium multilayers
- F. Herman
- Ph. Lambin
- et al.
- 1985
- Journal of Applied Physics
The characterization of indium desorbed Si surfaces for low temperature surface cleaning in Si molecular beam epitaxy
- H.T. Yang
- P.M. Mooney
- 1985
- Journal of Applied Physics