T.R. McGuire, S.J. La Placa, et al.
Journal of Applied Physics
Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-Å-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.
T.R. McGuire, S.J. La Placa, et al.
Journal of Applied Physics
I.C. Noyan, E. Liniger, et al.
MRS Spring Meeting 1996
H.K. Kao, G.S. Cargill III, et al.
Journal of Applied Physics
G.S. Cargill III, R.F. Boehme, et al.
Physical Review Letters