Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
- Carlos Navarro
- Siegfried Karg
- et al.
- 2019
- Nature Electronics
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Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond
- Charlie Liu
- Elliott Franke
- et al.
- 2018
- Nature Electronics
Mixed-precision in-memory computing
- 2018
- Nature Electronics
Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays
- Jianshi Tang
- Qing Cao
- et al.
- 2018
- Nature Electronics