Publications

2347 results at Applied Physics Letters

Thermally stable, low-resistance NiInWN_x ohmic contacts to n-type GaAs prepared by sputter deposition
- - Masanori Murakami
  - Naftali Lustig
  - et al.
- 1991
- Applied Physics Letters
Highly carbon-doped p-type Ga_0.5In_0.5As and Ga _0.5In_0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- - T.P. Chin
  - P.D. Kirchner
  - et al.
- 1991
- Applied Physics Letters
Characterization of epitaxial GaAs and Al_xGa_1-xAs layers doped with oxygen
- - M.S. Goorsky
  - T.F. Kuech
  - et al.
- 1991
- Applied Physics Letters
Magnetic ordering in Tb_xFe_1-x amorphous films: An application of x-ray dichroism with linearly polarized light
- - Maurizio Sacchi
  - Ronald J. H. Kappert
  - et al.
- 1991
- Applied Physics Letters
Grazing angle optical emission interferometry for end-point detection
- - David Angell
  - Gottlieb S. Oehrlein
- 1991
- Applied Physics Letters
Enhancement of optical reflectivity of high T_c superconducting films by ion milling
- - J.H. Kim
  - K. Char
  - et al.
- 1991
- Applied Physics Letters
Optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors
- - B. Laikhtman
  - R.A. Kiehl
  - et al.
- 1991
- Applied Physics Letters
Low Au content thermally stable NiGe(Au)W ohmic contacts to n-type GaAs
- - Naftali Lustig
  - Masanori Murakami
  - et al.
- 1991
- Applied Physics Letters
Long-range, minority-carrier transport in high quality "surface- free" GaAs/AlGaAs double heterostructures
- - G.D. Gilliland
  - D.J. Wolford
  - et al.
- 1991
- Applied Physics Letters
Properties of DX centers in Al_xGa_1-xAs co-doped with boron and silicon
- - P.M. Mooney
  - M.A. Tischler
  - et al.
- 1991
- Applied Physics Letters