Publication
Applied Physics Letters
Paper

Grazing angle optical emission interferometry for end-point detection

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Abstract

Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of ±30 Å. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.

Date

01 Dec 1991

Publication

Applied Physics Letters

Authors

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