Effects of biased cosputtering on resistivity and step coverage in tungsten silicide filmsK.W. ChoiK.Y. Ahn1985JVSTA
Properties and Microelectronic Applications of Thin Films of Refractory Metal NitridesMarc Wittmer1985JVSTA
Reactive sputtering of copper and silicon near the sputtering thresholdT.M. MayerJ.M.E. Harperet al.1985JVSTA
Unoccupied surface state and conduction band critical points of GaP(110): A high resolution inverse photoemission studyD. StraubM. Skibowskiet al.1985JVSTA
Summary Abstract: Microstructure and electrical conductivity of plasma deposited gold/fluorocarbon composite filmsJ. PerrinB. Despaxet al.1985JVSTA
Summary Abstract: Plasma potentials of 13.56 MHz rf argon glow discharges in a planar systemK. KehlerJ.W. Coburnet al.1985JVSTA
Summary Abstract: Titanium silicide films prepared by reactive sputteringV. DelineF.M. d’Heurle1985JVSTA
Summary Abstract: The interaction mechanism of inelastic electron tunneling spectroscopy probed by high resolution electron energy loss spectroscopyM. LiehrP.A. Thiryet al.1985JVSTA