22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
- S. Narasimha
- P. Chang
- et al.
- 2012
- IEDM 2012
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4 results for Min Dai
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Deposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- S. Siddiqui
- M.M. Chowdhury
- et al.
- 2013
- ECS Meeting 2013
Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
- Min Dai
- Yanfeng Wang
- et al.
- 2013
- Journal of Applied Physics