Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology
- Hiroaki Niimi
- Zuoguang Liu
- et al.
- 2016
- IEEE Electron Device Letters
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75 results for Juntao Li
Microstructure modulation in copper interconnects
- Chih-Chao Yang
- Baozhen Li
- et al.
- 2014
- IEEE Electron Device Letters
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
Development of Epitaxial SiGeB as a Test Vehicle to Evaluate Source-Drain Etchout during Channel Release of Gate-all-Around Devices: Topic/category: AEPM: Advanced Equipment Processes and Materials
- M. Nasseri
- C. Durfee
- et al.
- 2024
- ASMC 2024
Process Challenge in Analog Computing Hardware using Phase Change Memory (PCM)
- Victor Chan
- I. Ok
- et al.
- 2023
- ASMC 2023
Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure
- Juntao Li
- Shogo Mochizuki
- et al.
- 2022
- ISTFA 2022
Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects
- Son Van Nguyen
- Hosadurga Shobha
- et al.
- 2021
- IITC 2021
In-line Raman spectroscopy for stacked nanosheet device manufacturing
- Daniel Schmidt
- C. Durfee
- et al.
- 2021
- SPIE Advanced Lithography 2021
Middle of Line (MOL) Process Investigation in Ring Oscillator failure
- Victor Chan
- M. Bergendahl
- et al.
- 2020
- ASMC 2020
Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2020
- VLSI Technology 2020