Noise spectroscopy to study the 1D electron transport properties in InAs nanowires
- M. Petrychuk
- I. Zadorozhnyi
- et al.
- 2019
- Nanotechnology
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103 results for Siegfried Karg
Z2-FET as Capacitor-Less eDRAM Cell for High-Density Integration
- Carlos Navarro
- Meng Duan
- et al.
- 2017
- IEEE T-ED
Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM
- Carlos Navarro
- Joris Lacord
- et al.
- 2017
- IEEE T-ED
Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
- Johannes Gooth
- Vanessa Schaller
- et al.
- 2017
- Applied Physics Letters
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- IEEE J-EDS
One-dimensional behavior and high thermoelectric power factor in thin indium arsenide nanowires
- Philipp Mensch
- Siegfried Karg
- et al.
- 2015
- Applied Physics Letters
Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors
- Siegfried F. Karg
- V. Troncale
- et al.
- 2014
- Nanotechnology
Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires
- Volker Schmidt
- Philipp F. J. Mensch
- et al.
- 2014
- Applied Physics Letters
Interface state density of single vertical nanowire MOS capacitors
- Philipp Mensch
- Kirsten E. Moselund
- et al.
- 2013
- IEEE TNANO
Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain
- Giorgio Signorello
- Siegfried Karg
- et al.
- 2013
- Nano Letters