Choonghyun Lee, Richard G. Southwick, et al.
IEDM 2016
Charge pumping is one of the most relied techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents, which render the technique unsuitable for advanced technology nodes. We demonstrate a new frequency-modulated charge pumping methodology in which we transform the quasi-dc charge pumping measurement into an ac measurement. The ac detection scheme is highly resistant to gate leakage currents and extends the usefulness of charge pumping as a defect monitoring tool for future technologies.
Choonghyun Lee, Richard G. Southwick, et al.
IEDM 2016
Narendra Parihar, Richard G. Southwick, et al.
IEDM 2017
Miaomiao Wang, X. Miao, et al.
ASICON 2017
Choonghyun Lee, Shogo Mochizuki, et al.
IEDM 2017