Rapid-turnaround characterization methods for MRAM developmentDavid W. AbrahamPhilip L. Trouilloudet al.2006IBM J. Res. Dev
Thermally activated switching in spin-flop tunnel junctionsV. KorenivskiD.C. Worledge2005Applied Physics Letters
Reduction of positional errors in a four-point probe resistance measurementD.C. Worledge2004Applied Physics Letters
A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory ApplicationsA.R. SitaramD.W. Abrahamet al.2003VLSI Technology 2003
Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunnelingD.C. WorledgeP.L. Trouilloud2003Applied Physics Letters
Conducting atomic-force-microscope electrical characterization of submicron magnetic tunnel junctionsD.C. WorledgeDavid W. Abraham2003Applied Physics Letters