Spin-Transfer Torque Magnetoresistive Random Access Memory Technology Status and Future Directions
- Daniel Worledge
- Guohan Hu
- 2024
- Nat. Rev. Electr. Eng.
Publications
70 results for Daniel Worledge
Impact of External Magnetic Fields on STT-MRAM: An Application Note
- Bernard Dieny
- Sanjeev Aggarwal
- et al.
- 2024
- IEEE ED-M
First demonstration of high retention energy barriers and 2 ns switching, using magnetic ordered-alloy-based STT MRAM devices
- Matthias Gottwald
- Guohan Hu
- et al.
- 2024
- VLSI Technology and Circuits 2024
Write-error-rate of Spin-Transfer-Torque MRAM (Invited)
- 2023
- IRPS 2023
A snapshot review of double magnetic junctions for STT-MRAM
- D.C. Worledge
- Guohan Hu
- 2023
- MRS Advances
Spin-Transfer-Torque MRAM: The Next Revolution in Memory
- 2023
- APS March Meeting 2023
Double spin-torque magnetic tunnel junction devices for last-level cache applications
- G. Hu
- C. Safranski
- et al.
- 2022
- IEDM 2022
Advances in Spin-Transfer-Torque MRAM
- 2022
- MRS Fall Meeting 2022
STT-MRAM - Status and Outlook
- Daniel C. Worledge
- C. Safranski
- et al.
- 2022
- TMRC 2022
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
- C. Safranski
- G. Hu
- et al.
- 2022
- VLSI Technology and Circuits 2022