Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling

D.C. Worledge; P.L. Trouilloud

doi:10.1063/1.1590740

Applied Physics Letters

Paper

30 Jun 2003

Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling

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Abstract

Magnetoresistance (MR) measurement of unpatterned magnetic tunnel junction wafers was discussed. Current-in-plane tunneling was used. It was found that results are particularly useful for optimizing deposition conditions, nondestructive monitoring and also measures thermal stability.

Conference paper