Spin flop switching for magnetic random access memory

Abstract

A model of spin flop switching was developed to eliminate half select and activation energy in magnetic random access memory (MRAM). The model was developed for arbitrary thickness, length, width, magnetization, intrinsic anisotropy and exchange coupling on applied field. The field required to switch the bit under half select was found larger than the field required for full select. The activation energy was found to increase under application of a half select field and eliminated soft error problem.