Impact of External Magnetic Fields on STT-MRAM: An Application Note

Bernard Dieny; Sanjeev Aggarwal; Vinayak Naik; Sebastien Couet; Thomas Coughlin; Shunsuke Fukami; Kevin Garello; Jack Guedj; Jean Anne Incorvia; Laurent Lebrun; Kyung-jin Lee; Daniele Leonelli; Yonghwan Noh; Siamak Salimy; Steven Soss; Luc Thomas; Weigang Wang; Daniel Worledge

doi:10.1109/MED.2024.3442086

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IEEE ED-M

Paper

Impact of External Magnetic Fields on STT-MRAM: An Application Note

IEEE ED-M

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Abstract

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic fields and the typical magnitudes of magnetic fields are given.