Alberto Valdes Garcia
IMS 2024
Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) is a non-volatile memory technology with a unique combination of speed, endurance, density, and ease of fabrication, which has enabled it to recently replace embedded Flash as the embedded non-volatile memory of choice for advanced applications, including automotive micro-controller units. In this review article, we describe the working principles of STT-MRAM, and provide a brief history of its development. We then discuss the requirements, product status, and outlook for four key STT-MRAM applications: standalone, embedded non-volatile memory, non-volatile working memory, and last-level cache. Finally, we review potential future directions beyond STT-MRAM, including spin-orbit torque MRAM (SOT-MRAM) and voltage control of magnetic anisotropy MRAM (VCMA-MRAM), with an emphasis on their technological potential.
Alberto Valdes Garcia
IMS 2024
Aakrati Jain, Kamal Sikka, et al.
ECTC 2021
Ruqiang Bao, K. Watanabe, et al.
VLSI Technology 2020
Adrianna Frackowiak, Katja-Sophia Csizi, et al.
ICMSE 2024