A Multiscale Workflow for Thermal Analysis of 3DI Chip Stacks
Max Bloomfield, Amogh Wasti, et al.
ITherm 2025
The development of double magnetic junctions for spin-transfer torque magnetoresistive random access memory (STT-MRAM) is reviewed, with an emphasis on work from IBM. A brief overview of the theory of spin-transfer torque in double magnetic tunnel junctions is given, showing that for high spin-polarization, up to a factor of 10 improvement in switching efficiency is theoretically possible. Experimental results on double magnetic tunnel junctions, using two tunnel barriers, show a factor of two improvement in switching efficiency. Experimental results on double spin-torque magnetic tunnel junctions, using one tunnel barrier and one low resistance spacer, show close to a factor of two improvement in switching efficiency, and enable reliable switching down to 250 ps. Graphical Abstract: [Figure not available: see fulltext.]
Max Bloomfield, Amogh Wasti, et al.
ITherm 2025
Victor Chan, A. Gasasira, et al.
IEEE Trans Semicond Manuf
Riduan K. Aljameh, Pedro A. M. Bezerra, et al.
PwSoC 2016
Bodhisatwa Sadhu, Arun Paidimarri, et al.
ISSCC 2022