Challenges and opportunities for high performance 32 nm CMOS technology
- J. Sleight
- I. Lauer
- et al.
- 2006
- IEDM 2006
Publications
63 results for Dechao Guo
Gate-dielectric permitivity and metal-gate work-function tradeoff in Lmet = 25 nm PDSOI device characteristics
- Dechao Guo
- Andres Bryant
- et al.
- 2006
- IEEE Electron Device Letters
High performance gate first HfSiON dielectric satisfying 45nm node requirements
- M.A. Quevedo-Lopez
- S. Krishnan
- et al.
- 2005
- IEDM 2005