Publications

198 results for Vijay Narayanan

Process and electrical characteristics of MO-ALD HfO₂ films for high-K gate applications grown in a production-worthy 300 mm deposition system
- - R.D. Clark
  - C.S. Wajda
  - et al.
- 2007
- ECS Meeting 2007
Band edge high-K /metal gate n-MOSFETs using ultra thin capping layers
- - V.K. Paruchuri
  - V. Narayanan
  - et al.
- 2007
- VLSI-TSA 2007
Impact of high-κ and SiO₂ interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO₂ n-MOSFETs: role of high-κ phonons
- - P. Srinivasan
  - B.P. Linder
  - et al.
- 2007
- Microelectronic Engineering
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- - V. Narayanan
  - V.K. Paruchuri
  - et al.
- 2007
- Microelectronic Engineering
Dual layer SrTiO₃/HfO₂ gate dielectric for aggressively scaled band-edge nMOS devices
- - C. Choi
  - E. Cartier
  - et al.
- 2007
- Microelectronic Engineering
Oxygen vacancies in high dielectric constant oxide-semiconductor films
- - Supratik Guha
  - Vijay Narayanan
- 2007
- Physical Review Letters
Interfacial microstructure of NiSi_x/HfO₂/SiO_x/Si gate stacks
- - M. Gribelyuk
  - C. Cabral Jr.
  - et al.
- 2007
- Thin Solid Films
Recent advances in search for suitable high-k/metal gate solutions to replace SiON/Poly-silicon gate stacks in CMOS devices for 45nm and beyond technologies
- - B.P. Linder
  - V.K. Paruchuri
  - et al.
- 2007
- ECS Meeting 2007
Examination of flatband and threshold voltage tuning of HfO₂/TiN field effect transistors by dielectric cap layers
- - S. Guha
  - V.K. Paruchuri
  - et al.
- 2007
- Applied Physics Letters
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- - V. Narayanan
  - V.K. Paruchuri
  - et al.
- 2006
- VLSI Technology 2006