CVD and ALD Co(W) films using amidinato precursors as a single-layered barrier/liner for next-generation Cu-interconnects
- Hideharu Shimizu
- Yudai Suzuki
- et al.
- 2013
- ECS J. Solid State Sci. Technol.
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55 results for Takeshi Nogami
Electromigration in Cu(Al) and Cu(Mn) damascene lines
- C.-K. Hu
- J. Ohm
- et al.
- 2012
- Journal of Applied Physics
Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)
- F. Ito
- H. Shobha
- et al.
- 2012
- Microelectronic Engineering
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- J. Kelly
- Takeshi Nogami
- et al.
- 2012
- JES