IITC 2004
Conference paper

Optimization of SiCOH dielectrics for integration in a 90 nm CMOS technology


The successful integration of SiCOH films in a reliable ULSI integrated circuit chip imposes many requirements on the properties of the dielectric material. This paper describes a selection and optimization process for choosing the best film to be integrated in Cu wiring levels of ULSI CMOS chips in the 90 nm technology node.