On the Frequency Dependence of Bulk Trap Generation during AC Stress in Si and SiGe RMG P-FinFETs
The impact of channel Germanium content (Ge%) and gate stack Nitrogen content (N%), on bulk trap generation time kinetics is studied by using DC and AC stress at different voltageand temperature (T) in RMG HKMG Si and SiGe p-FinFETs. It is shown that magnitude is dependent on frequency (f), which can make the resulting threshold voltage shift dependent on f for some stress conditions. The f dependence of and Delta becomes stronger at higher Ge% and weaker at higher N%. The time kinetics is modeled for DC and AC stress under different stress conditions (VGSTR, T and f) and for different processes (Ge%, N%).