Electrical properties of copper-silicon Schottky barriers
- M.O. Aboelfotoh
- B.G. Svensson
- 1999
- Semiconductor Science and Technology
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11 results for B.G. Svensson
Electrically active point defects in n-type 4H-SiC
- J. Doyle
- M.K. Linnarsson
- et al.
- 1998
- Journal of Applied Physics
Copper diffusion in amorphous germanium
- J. Doyle
- A.Yu. Kuznetsov
- et al.
- 1998
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Observation of near-surface electrically active defects in n-type 6H-SiC
- J. Doyle
- A. Schöner
- et al.
- 1998
- Journal of Applied Physics
On the formation of epitaxial CoSi2 from the reaction of Si with a Co/Ti bilayer
- S.-L. Zhang
- J. Cardenas
- et al.
- 1995
- Applied Physics Letters
Effect of interfacial hydrogen in CoSi2/Si(100) Schottky-barrier contacts
- M.O. Aboelfotoh
- A.D. Marwick
- et al.
- 1993
- ICDS 1993
Interaction between copper and point defects in proton-irradiated silicon
- S. Tamulevicius
- B.G. Svensson
- et al.
- 1992
- Journal of Applied Physics
Copper passivation of boron in silicon and boron reactivation kinetics
- M.O. Aboelfotoh
- B.G. Svensson
- 1991
- Physical Review B
Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence
- H. Weman
- J.L. Lindström
- et al.
- 1990
- Journal of Applied Physics
Schottky-barrier behavior of copper and copper silicide on n-type and p-type silicon
- M.O. Aboelfotoh
- A. Cros
- et al.
- 1990
- Physical Review B