About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Copper diffusion in amorphous germanium
Abstract
The diffusion coefficient of copper in amorphous germanium is estimated to be larger than 3 × 10-11 cm2 s-1 and the solubility to be ∼7 × 1018 cm-3 at 200°C as determined from secondary mass spectrometry. The observed solubility limit is more than eight orders of magnitude greater than that in crystalline germanium and the enthalpy of a solution of copper in amorphous germanium is estimated to be as low as 0.05 eV in the range of 20-200°C. Copper is observed to diffuse more readily in amorphous germanium than in amorphous silicon, with an activation enthalpy as low as ∼0.5 eV in the range of 20-200°C. Interstitial diffusion is assumed to prevail and the trapping enthalpy of defects retarding the motion is found to be significantly lower in amorphous germanium (0.25±0.15 eV) compared to that in amorphous silicon (∼0.8 eV). © 1998 American Vacuum Society.