Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Electrical measurements on titanium-Schottky diodes were used to evaluate the effects of reactive ion etching (RIE) processing and various post-RIE treatments on silicon substrates. Based on a model for the Schottky barrier with an interfacial layer, the measurements allow one to estimate the effect of an oxygen treatment or an O2-RIE clean-up with a wet chemical etch on the C- and F-containing insulator layer and the residual damage to a silicon surface by different RIE systems. It was shown that the oxygen treatment reduced the thickness of the "polymeric" layer, and decreased the density of surface states. A significant residual damage after O2 clean-up with HF dip was found for the CF4/H2 system. Lastly, the effect of thermal annealing at 950°C was investigated, and it was found that it gives rise to an increased density of surface states. © 1986.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ronald Troutman
Synthetic Metals