Recombination Measurement of n-Type Heavily Doped Layer in High/Low Silicon Junctions

Abstract

The hole lifetime within a heavily doped n⁺ region has been determined using a measurement technique which evaluates the effective recombination velocity of n-n⁺ interfaces. Measurements of n⁺ layers of different types, like substrates, implanted buried layers, and diffused layers, suggest that the minority-carrier lifetime of such regions can be strongly degraded by the device fabrication processes. Results are consistent with the SRH lifetime value two orders of magnitude lower than values for bulk material reported in literature. © 1991 IEEE