Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The origin of the potential dependence of the high vibration frequency vCN is explained as a Stark effect. It is shown by means of ab initio cluster calculations that the coupling of vCN to the low frequency metal-ligand stretch plays a crucial role. © 1987.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
John G. Long, Peter C. Searson, et al.
JES
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
T.N. Morgan
Semiconductor Science and Technology