S. Maat, A.J. Kellock, et al.
Journal of Magnetism and Magnetic Materials
Concurrent low energy (50-70 eV) ion irradiation during silicon molecular beam epitaxy results in an increased epitaxial thickness at very low temperatures relative to conventional molecular beam epitaxy. Ion irradiation of a (1×1) dihydride-terminated Si(001) results in a (2×1) reconstruction, indicating irradiation-induced hydrogen desorption. Conventional molecular beam epitaxial growth is possible on a dihydride-terminated Si(001) surface following (2×1) reconstruction such that the substrate temperature never exceeds 150°C; which is not possible without irradiation.
S. Maat, A.J. Kellock, et al.
Journal of Magnetism and Magnetic Materials
S. García-Blanco, A.J. Kellock, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
R.S. Shenoy, K. Gopalakrishnan, et al.
VLSI Technology 2011
J.E.E. Baglin, Shouheng Sun, et al.
MRS Proceedings 2003