Katayun Barmak, Jr. Cabral, et al.
Journal of Materials Research
Concurrent low energy (50-70 eV) ion irradiation during silicon molecular beam epitaxy results in an increased epitaxial thickness at very low temperatures relative to conventional molecular beam epitaxy. Ion irradiation of a (1×1) dihydride-terminated Si(001) results in a (2×1) reconstruction, indicating irradiation-induced hydrogen desorption. Conventional molecular beam epitaxial growth is possible on a dihydride-terminated Si(001) surface following (2×1) reconstruction such that the substrate temperature never exceeds 150°C; which is not possible without irradiation.
Katayun Barmak, Jr. Cabral, et al.
Journal of Materials Research
T.C. Kaspar, T. Droubay, et al.
Physical Review B - CMMP
H.Z. Guo, J. Burgess, et al.
Physical Review B - CMMP
L. Folks, J.E.E. Baglin, et al.
IEEE Transactions on Magnetics