Shouheng Sun, Simone Anders, et al.
JACS
In this paper, the effects of irradiation of Ge-doped FHD silica with 2 MeV Ar+ ions were optically characterized using an m-line technique based on grating couplers. An increase of refractive index as high as 1.2×10-2 was obtained, larger than the values normally reported for UV or electron-beam irradiation of the same material (typically of ≈10-3). Thermal annealing has been carried out and an activation energy of 0.36 eV for the recovery of the refractive index has been estimated, suggesting that a bond rearrangement mechanism could be responsible for the change in refractive index. © 2003 Elsevier Science B.V. All rights reserved.
Shouheng Sun, Simone Anders, et al.
JACS
S.A. Chambers, S. Thevuthasan, et al.
Applied Physics Letters
J.M. Neri, D.A. Hammer, et al.
IEEE TNS
A.J. Kellock, J.E.E. Baglin
Nuclear Inst. and Methods in Physics Research, B