High speed lateral trench detectors with a junction substrate
Qiqing Ouyang, J. Schaub
Device Research Conference 2003
We have fabricated a vertical p-channel metal-oxide-semiconductor field-effect transistor called high-mobility heterojunction transistor (HMHJT). Compared with a Si control device, reduced short channel effects, reduced floating body effect, and high drive current have been achieved with this device structure. A SiGe/Si heterojunction barrier at the source/bulk junction suppresses drain induced barrier lowering and bulk punchthrough, which are significant problems for sub-100 nm devices. A SiGe source also helps to reduce the charge built-up in the floating body. The higher mobility in a strained SiGe channel and the absence of a hetero-barrier between the source and channel result in higher drive current. The fabricated HMHJT has a 60% higher drive current at VDS = VGS - VT= - 1.6V, and a 70× lower off-state leakage current at VDS =-1.6 V and VGS = 0.0 V, compared with the Si control device. © 2001 American Institute of Physics.
Qiqing Ouyang, J. Schaub
Device Research Conference 2003
Jin Cai, Mahender Kumar, et al.
BCTM 2003
Xinlin Wang, Phil Oldiges, et al.
SISPAD 2005
Qiqing Ouyang, Meikei Ieong, et al.
VLSI Technology 2005