Saibal Mukhopadhyay, Keunwoo Kim, et al.
IEEE Electron Device Letters
Profiles representatives of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors were used to study the band-to-band tunneling in ion-implanted P/N junction diodes. A quasi-universal exponential reduction of tunneling current versus tunneling distance was found when the tunneling current was plotted against the effective tunneling distance. It corresponded to a tunneling effective mass and an extrapolated tunneling current at zero tunnel distance. The results are useful for analyzing ultrascaled metal-oxide-silicon (MOS) transistors and in quantifying the limits of silicon CMOS.
Saibal Mukhopadhyay, Keunwoo Kim, et al.
IEEE Electron Device Letters
David J. Frank, Robert H. Dennard, et al.
Proceedings of the IEEE
Cai Jin, David J. Frank, et al.
VLSI-TSA 2007
Jin Cai, Yuan Taur, et al.
VLSI Technology 2002