Jing Wang, Paul M. Solomon, et al.
IEEE Transactions on Electron Devices
Profiles representatives of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors were used to study the band-to-band tunneling in ion-implanted P/N junction diodes. A quasi-universal exponential reduction of tunneling current versus tunneling distance was found when the tunneling current was plotted against the effective tunneling distance. It corresponded to a tunneling effective mass and an extrapolated tunneling current at zero tunnel distance. The results are useful for analyzing ultrascaled metal-oxide-silicon (MOS) transistors and in quantifying the limits of silicon CMOS.
Jing Wang, Paul M. Solomon, et al.
IEEE Transactions on Electron Devices
Paul M. Solomon
IEEE Electron Device Letters
David J. Frank, Paul M. Solomon, et al.
IEEE T-ED
Hon-Sum Philip Wong, David J. Frank, et al.
Proceedings of the IEEE