Publication
Journal of Non-Crystalline Solids
Paper

Transport properties and defect states of a-Si:H grown by HOMOCVD

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Abstract

In this paper, experimental measurements of surface and gap state densities for homogeneous chemical vapor deposited (HOMOCVD) hydrogenated amorphous silicon (a-Si:H) were obtained by C-ω-T, C-V, DLTS and ESR. These results are compared to glow discharge prepared amorphous films. The experimental data and calculated numbers are used to show better agreement with the diffusion rather than the thermionic theory for these amorphous silicon Schottky diodes. © 1984.

Date

01 Jan 1984

Publication

Journal of Non-Crystalline Solids

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