Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
We describe theoretically a new, transient, photovoltaic effect which occurs in superlattices presenting a spatial separation of the electron and hole wavefunctions together with a lack of global reflection symmetry. The luminescence of an InAs-GaSb semiconductor superlattice under pulsed excitation shows an increase of the band gap with the density of injected carriers, which we relate to this photovoltaic effect. © 1986.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures