Publication
Surface Science
Paper

Transient photovoltaic effect in InAs-GaSb superlattices

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Abstract

We describe theoretically a new, transient, photovoltaic effect which occurs in superlattices presenting a spatial separation of the electron and hole wavefunctions together with a lack of global reflection symmetry. The luminescence of an InAs-GaSb semiconductor superlattice under pulsed excitation shows an increase of the band gap with the density of injected carriers, which we relate to this photovoltaic effect. © 1986.

Date

03 Aug 1986

Publication

Surface Science

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