H.D. Dulman, R.H. Pantell, et al.
Physical Review B
We describe theoretically a new, transient, photovoltaic effect which occurs in superlattices presenting a spatial separation of the electron and hole wavefunctions together with a lack of global reflection symmetry. The luminescence of an InAs-GaSb semiconductor superlattice under pulsed excitation shows an increase of the band gap with the density of injected carriers, which we relate to this photovoltaic effect. © 1986.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992