Performance test case generation for microprocessors
Pradip Bose
VTS 1998
Electrical test structures provide a method of rapid, low-cost end-of-process metrology for both materials properties and specific process information. The results from electrical test structures for routine monitoring of key process parameters such as line width, edge-taper width, layer-to-layer alignment, and metal coverage are compared with those from traditional metrology methods. In all cases, the correlation coefficient R was near unity, R2 ≥ 0.97, demonstrating that electrical test structures have sufficient accuracy for process-control applications. For the structures used, the line width, edge-taper width, and layer-to-layer-alignment electrical measurements have uncertainties of less than 0.1 μm. The test structures are all compatible with typical thin-film-transistor (TFT) array processing.
Pradip Bose
VTS 1998
Frank R. Libsch, S.C. Lien
IBM J. Res. Dev
Oliver Bodemer
IBM J. Res. Dev
Inbal Ronen, Elad Shahar, et al.
SIGIR 2009