Julien Autebert, Aditya Kashyap, et al.
Langmuir
A novel and effective technique for fabricating metal surfaces with controlled topography is described. The metal of interest is deposited onto a thin (25–200 A) underlayer of a liquid metal. Transient liquid reactions during film growth and coalescence lead to characteristic roughening of the deposits. Studies of 1-μm A1 films deposited on thin Ga underlayers revealed a consistent increase of the size of A1 features with the average thickness of the Ga underlayer. No apparent change in the films’ resistivity was detected. Limited studies of 1-μm Cu films with a Ga underlayer suggest the general applicability of this technique. © 1989, American Vacuum Society. All rights reserved.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals