Thermally Developable, Positive Tone, Oxygen RIE Barrier Resist for Bilayer Lithography

Abstract

Poly(4-trimethylsilylphthalaldehyde) sensitized with triphenylsulfonium triflate develops to the substrate upon post- bake. The sensitivity is very high owing to chemical amplification. The resist system does not self-develop during exposure but the development is achieved simply by heating the image-wise exposed resist. The thermally developed resist image serves as an oxygen RIE barrier for the pattern transfer in the bilayer resist scheme, providing a new positive-tone all dry process. © 1989, The Electrochemical Society, Inc. All rights reserved.