Revanth Kodoru, Atanu Saha, et al.
arXiv
Poly(4-trimethylsilylphthalaldehyde) sensitized with triphenylsulfonium triflate develops to the substrate upon post- bake. The sensitivity is very high owing to chemical amplification. The resist system does not self-develop during exposure but the development is achieved simply by heating the image-wise exposed resist. The thermally developed resist image serves as an oxygen RIE barrier for the pattern transfer in the bilayer resist scheme, providing a new positive-tone all dry process. © 1989, The Electrochemical Society, Inc. All rights reserved.
Revanth Kodoru, Atanu Saha, et al.
arXiv
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
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Physics of Fluids