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Publication
Microlithography 1993
Conference paper
TAR processing for CD control in I-line and 248 nm lithography
Abstract
The combination of dyed photoresist and top antireflection (TAR) coatings was applied to I-line and deep-UV lithography on polysilicon. Optimization of the resist layer's absorption and application of the TAR process significantly improves CD control of submicron gate level lithography.