M. Dekkers, M. Nguyen, et al.
TechConnect 2017
We report on the stabilization of ferroelectric Hf x Zr 1-x O 2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 °C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (P r ) of ∼21 μC/cm 2 and a coercive field (E c ) of ∼1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films.
M. Dekkers, M. Nguyen, et al.
TechConnect 2017
Felix Eltes, J. Elliott Ortmann, et al.
ECOC 2018
Andreas Messner, Felix Eltes, et al.
OFC 2018
Ping Ma, Yannick Salamin, et al.
SPIE OPTO 2021