About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
physica status solidi RRL
Paper
Ferroelectric, Analog Resistive Switching in Back-End-of-Line Compatible TiN/HfZrO4/TiOx Junctions
Abstract
Due to their compatibility with complementary metal–oxide–semiconductor technologies, hafnium-based ferroelectric devices receive increasing interest for the fabrication of neuromorphic hardware. Herein, an analog resistive memory device is fabricated with a process developed for back-end-of-line integration. A 4.5 nm-thick HfZrO4 (HZO) layer is crystallized into the ferroelectric phase, a thickness thin enough to allow electrical conduction through the layer. A TiOx interlayer is used to create an asymmetric junction as required for transferring a polarization state change into a modification of the conductivity. Memristive functionality is obtained, both in the pristine state and after ferroelectric wake-up, involving redistribution of oxygen vacancies in the ferroelectric layer. The resistive switching is shown to originate directly from the ferroelectric properties of the HZO layer.