T.W. Hickmott, P. Solomon
Journal of Applied Physics
The mobility of holes in Si inversion layers for different crystal orientation was studied using a six-band k·p model. Compressive or tensile strain applied to the channel, varying thickness of the silicon layer were also investigated. It was found that compressive and tensile strain enhance the mobility.
T.W. Hickmott, P. Solomon
Journal of Applied Physics
M.V. Fischetti, S.E. Laux, et al.
Applied Surface Science
M.A. Tischler, T.F. Kuech, et al.
Applied Physics Letters
B. Doris, M. Ieong, et al.
IEDM 2003