PaperTemperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substratesK. Weiser, P. Solomon, et al.Journal of Applied Physics
Conference paperS-parameter characterization of GaAs gate SISFETs at liquid nitrogen temperaturesY. Kwark, P. Solomon, et al.IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1989
PaperOptical measurements of warped valence bands in quantum wellsJ.A. Kash, M. Zachau, et al.Surface Science
PaperEpitaxial Growth of GaAs with (C2H5)2GaCl and AsH3 in a Hotwall ReactorT.F. Kuech, M.A. Tischler, et al.JES
