Abstract
Reaction at the transition-metal/Si interface can lead to considerable variety in the overall structure of the interface, particularly the overlayer microstructure, interface morphology, and lattice structure of the metallic reaction product (silicide). However, the basic chemical bonding between metal and Si atoms at the interface dominates its electronic and local atomic structure and drives the interface reaction processes. The Schottky barrier electrical properties of the contact are determined by these more intrinsic aspects of the interfacial metal-Si atom bonding and reaction, including the local electronic structure and associated charge transfer, typical local atomic environment and structure, and possible consequences of the reaction such as structural or compositional defects with relatively high density at or near the interface. © 1984.