Publication
Physical Review B
Paper

Resonance Raman scattering under [111] uniaxial stress in the region of the E1 gap in InAs

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Abstract

Uniaxial stress along [111] has been used to vary the different mechanisms contributing to resonance Raman scattering from allowed TO phonons in the region of the E1 gap in InAs. The significant stress-induced splittings and changes in the resonance Raman line shape of the spectral distribution that have been observed are accounted for by a recent model based on phonon modulation of both the energy gap and wave functions. These results provide a strong confirmation of this model. © 1974 The American Physical Society.

Date

15 Jan 1974

Publication

Physical Review B

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