J.H. Stathis, R. Bolam, et al.
INFOS 2005
Uniaxial stress along [111] has been used to vary the different mechanisms contributing to resonance Raman scattering from allowed TO phonons in the region of the E1 gap in InAs. The significant stress-induced splittings and changes in the resonance Raman line shape of the spectral distribution that have been observed are accounted for by a recent model based on phonon modulation of both the energy gap and wave functions. These results provide a strong confirmation of this model. © 1974 The American Physical Society.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
R.W. Gammon, E. Courtens, et al.
Physical Review B
John G. Long, Peter C. Searson, et al.
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007