Vertically stacked nanowire field effect transistors currently dominate the race to become mainstream devices for 7-nm CMOS technology node. However, these devices are likely to suffer from the issue of nanowire stack position dependent drain current. In this paper, we show that the nanowire located at the bottom of the stack is farthest away from the source/drain silicide contacts and suffers from higher series resistance as compared to the nanowires that are higher up in the stack. It is found that upscaling the diameter of lower nanowires with respect to the upper nanowires improved uniformity of the current in each nanowire, but with the drawback of threshold voltage reduction. We propose to increase source/drain trench silicide depth as a more promising solution to this problem over the nanowire diameter scaling, without compromising on power or performance of these devices.